suface mount package. s mhop microelectronics c orp. a STF2458 symbol v ds v gs i dm 80 w a p d c 1.56 -55 to 150 i d units parameter 24 10.0 60 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 24v 10a 10.2 @ vgs=4.0v 9.5 @ vgs=4.5v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 1.1 www.samhop.com.tw sep,24,2013 1 details are subject to change without notice. a t a =25 c t a =70 c a t a =70 c w dual n-channel enhancement mode field effect transistor green product esd protected. 8.0 1.00 11.5 @ vgs=3.1v 14.0 @ vgs=2.5v 10.4 @ vgs=3.7v g1 g2 s1 s1 s1 t d f n 2 x 3 g2 s2 s2 d1/d2 (bottom view) s1 g1 s2 s2 1 2 3 4 5 6 bottom drain contact p i n 1
symbol min typ max units bv dss 24 v 1 i gss 10 ua v gs(th) 0.5 v m ohm v gs =4.5v , i d =5.0a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =1.0ma v ds =20v , v gs =0v v gs = 12v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua on characteristics STF2458 ver 1.1 0.85 1.5 g fs 24 s c iss 1300 pf c oss 241 pf c rss 217 pf q g 29 nc 85 nc q gs 66 nc q gd 35 t d(on) 14 ns t r 2.7 ns t d(off) 7.0 ns t f ns gate-drain charge v ds =10v,v gs =0v switching characteristics gate-source charge v dd =20v i d =5.0a v gs =4.5v r gen =6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v , i d =5.0a input capacitance output capacitance dynamic characteristics forward transconductance reverse transfer capacitance v gs =4.0v , i d =5.0a m ohm c f=1.0mhz c v ds =20v,i d =10.0a, v gs =4.5v drain-source diode characteristics and maximum ratings v sd diode forward voltage v gs =0v,i s =10a 0.83 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 10us, duty cycle < 1%. c.guaranteed by design, not subject to production testing. _ _ www.samhop.com.tw sep,24,2013 2 _ 7.5 9.5 7.7 10.2 v gs =3.7v , i d =5.0a m ohm v gs =2.5v , i d =5.0a m ohm 10.4 14.0 6.0 6.2 8.0 v gs =3.1v , i d =5.0a m ohm 8.6 11.5 7.0 7.9 10.4 6.4
STF2458 ver 1.1 www.samhop.com.tw sep,24,2013 3 0 0 20 120 100 80 60 40 150 125 100 75 50 25 175 t a - ambient temperature - c dt - percentage of rated power - % derating factor of forward bias safe operating area 0 0 0.5 3 2.5 2 1.5 1 150 125 100 75 50 25 175 t a - ambient temperature - c pt - total power dissipation - w total power dissipation vs. ambient temperature mounted on fr-4 board of 1 inch 2 , 2oz 0.1 1 10 10 0.1 100 v gs =4.5v single pulse t a =25 c r ds (on) limit 0.01 10us forward bias safe operating area 100u s 1ms 10 m s d c v ds - drain to source voltage - v i d - drain current - a pw - pulse width - s rth(ch-a) - transient thermal resistance - c/w transient thermal resistance vs. pulse width 1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 mounted on fr-4 board of 1 inch 2 , 2oz single pulse 10 0ms
STF2458 ver 1.1 www.samhop.com.tw sep,24,2013 4 0 0 10 60 40 30 1 0.8 0.6 0.4 0.2 v ds - drain to source voltage - v i d - drain current - a v gs = 4.5 v 3.1 v 3.7 v 2.5 v 0.01 0 0.1 100 10 1 2.5 2 1.5 1 0.5 v gs - gate to source voltage - v i d - drain current - a forward transfer characteristics 3 25 c 75 c 125 c t a = -25 c 0.6 -50 0.7 1.0 0.9 0.8 150 100 50 0 t ch - channel temperature - c v gs(off) - gate to source cut-off voltage - v gatebto soure cut-off voltage vs. channel temperature i d = 1.0ma 0.01 0.01 0.1 100 10 1 100 10 1 0.1 i d - drain current - a . y fs . - forward transfer admittance - s forward transfer admittance vs. drain current t a = -25 c 25 c 75 c 125 c 0 5 20 15 10 100 10 1 0.1 i d - drain current - a r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. drain current v gs = 2.5 v 3.1 v 4.0 v 4.5 v 0 0 5 20 15 10 8 6 4 2 v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage 12 10 4.0 v 3.7 v 20 50 i d = 5.0 a
STF2458 ver 1.1 www.samhop.com.tw sep,24,2013 5 0.01 0.1 100 10 1 0.6 0.4 0.2 0 v f(s-d) - source to drain voltage - v i f - diode forward current - a source to drain diode forward voltage 0 -50 4 16 12 8 150 100 50 0 t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. channel temperature i d = 5.0 a 24 20 v gs = 2.5 v 3.1 v 4.0 v 4.5 v 1.2 1.0 0.8 v gs = 0 v 3.7 v 10 0.1 100 1000 100 10 1 v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf capacitance vs. drain to source voltage c oss c rss c iss 1 0.1 10 100 10 1 i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns switching characteristics t d(on) t d(off) t r t f v dd = 20.0 v v gs = 4.5 v r g = 6 q g - gate charge -nc v gs - gate to drain voltage - v dynamic input characteristics 0 0 4 3 2 16 12 8 4 1 v dd = 5 v 12 v 20 v i d = 10 a
STF2458 www.samhop.com.tw sep,24,2013 6 package outline dimensions ver 1.1 d pin #1 dot by marking top view tdfn ( 2 x 3 ) - 6l e tdfn 6 1 l c f h e pin #1 id chamfer 0.300mm bottom view a a1 b side view symbols millimeters inches a a1 d e h l e b c f min max min max 0.700 0.800 0.000 0.050 2.950 3.050 1.950 2.050 0.350 0.450 1.450 1.550 1.650 1.750 0.195 0.211 0.200 0.300 0.500 bsc 0.028 0.031 0.000 0.002 0.116 0.120 0.077 0.081 0.014 0.018 0.057 0.061 0.065 0.069 0.008 0.0076 0.008 0.012 0.020 bsc
STF2458 www.samhop.com.tw sep,24,2013 7 ver 1.1 tdfn 2x3-6l 2458 xxxxxx wafer lot no. production date (1,2 ~ 9, a,b...) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a...) product no. pin 1 smc internal code no.(a,b...z) top marking definition
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